Gatan, Inc.

Combining 4D STEM and in-situ experiments – Enabling statistical quantification of microstructural evolution

Date: Thursday, December 4, 2025
Time: 8:00 a.m. PDT | 11:00 a.m. EDT
Presenter: Dr. Josh Kacher, Associate Professor of Material Science & Engineering, Georgia Tech

The advent of electron counting direct detectors and 4D STEM has shifted TEM analysis from a primarily qualitative tool to one capable of true, representative statistical analysis. By combining 4D STEM data collection and post-collection pattern noise reduction, tens of thousands of grains can be analyzed in relatively short time periods. When paired with in-situ experiments, this enables statistical quantification of how microstructure evolves in response to applied stimuli.

In this webinar, we will discuss the combination of 4D STEM with quantitative in-situ TEM deformation experiments to explore the microstructural evolution of nanocrystalline and ultrafine grained thin films under applied loads. Specifically, we combine direct observations of grain boundary and dislocation-mediated plasticity with statistical analysis of over one hundred thousand grains to understand how microstructure conditions drive grain instability and localized plasticity and how this behavior dictates mechanical properties.

If you are unable to attend the live event, a recording will be sent to you via the registration information below.

Please fill in all data fields to register for the webinar.

 

The information you provide will be used in accordance with the terms of the Gatan privacy policy.

By submitting this form, I agree to the privacy policy agreement.