Date: Thursday, October 8, 2026 Time: 8:00 a.m. PDT | 11:00 a.m. EDT Presenter: Liam Spillane, Application Scientist, Gatan, Inc.
As semiconductor devices continue to scale below the 5 nm node, materials characterization workflows must deliver high throughput while minimizing electron dose to preserve increasingly fragile specimens. The transition to ultra-thin lamellae samples is driving the need to work at lower accelerating voltages to enhance analytical sensitivity, but it also increases susceptibility to beam-induced damage. This webinar explores how single-electron counting, monolithic active pixel sensor (MAPS) cameras enable dose-efficient acquisition of electron energy-loss spectroscopy (EELS) data, reducing noise, supporting rapid dose fractionation, and improving spatial resolution through continuous drift correction.
Using a commercial gate-all-around (GAA) based device as a case study, we demonstrate multimodal characterization with the F1-GIF System, combining EELS spectrum imaging and filtered 4D STEM to correlate chemical, structural, and strain information. The webinar highlights approaches for wide-energy-range EELS acquisition, high-precision strain mapping, and automated data collection under challenging low-kV conditions. Attendees will learn how the latest advances in electron optical and detector technology support robust analysis while maintaining sharp spectral focus across a broad energy-loss range, establishing an efficient path toward automated characterization of next-generation semiconductor devices.
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